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View irgp4069-e detailed specification:

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient VCE(on) typ. = 1.6V Tight Parameter Distribution n-channel Lead Free Package C C Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses E E C C Rugged Transient Performance for Increased Reliability G G Excellent Current Sharing in Parallel Operation TO-247AC TO-247AD IRGP4069PbF IRGP4069-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parame... See More ⇒

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