View irgps40b120u detailed specification:
PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. 10 s Short Circuit Capability. VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, Super-247 Package. E n-channel ICE = 40A, Tj=25 C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation. Super-247 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25 C Continuous Collector Current 80 IC @ TC = 100 C Continuous Collector Current 40 ICM Pulsed Collector Current 160 A ILM Clamped Inductive Load Current 160 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25 C Maximum Power Dissi... See More ⇒
Keywords - ALL TRANSISTORS SPECS
irgps40b120u.pdf Design, MOSFET, Power
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