All Transistors. Equivalents Search

 

View irgps40b120u detailed specification:

irgps40b120uirgps40b120u

PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. 10 s Short Circuit Capability. VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, Super-247 Package. E n-channel ICE = 40A, Tj=25 C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation. Super-247 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25 C Continuous Collector Current 80 IC @ TC = 100 C Continuous Collector Current 40 ICM Pulsed Collector Current 160 A ILM Clamped Inductive Load Current 160 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25 C Maximum Power Dissi... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irgps40b120u.pdf Design, MOSFET, Power

 irgps40b120u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgps40b120u.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


     

social 

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 
Back to Top

 

Popular searches

irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet

 


 
.