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View irgs15b60k detailed specification:

PD - 96358 IRGS15B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. IC = 15A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10 s, TJ=150 C E Lead-Free n-channel VCE(on) typ. = 1.8V Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. D2Pak IRGS15B60KPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 31 IC @ TC = 100 C Continuous Collector Current 15 A ICM Pulse Collector Current Vge = 15V 62 ILM Clamped Inductive Load Current Vge = 20V 62 VGE V Continuous Gate-to-Emitter Voltage 20 PD @ TC = 25 C Maximum Power Dissipat... See More ⇒

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