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View ixgx120n60b detailed specification:

HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B VCE(sat) 2.1V TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 200 A IC90 TC = 90 C 120 A ILRMS Terminal Current Limit 76 A G ICM TC = 25 C, 1ms 300 A C Tab E SSOA VGE= 15V, TVJ = 125 C, RG = 2.4 ICM = 200 A (RBSOA) Clamped Inductive Load @ 0.8 VCES V G = Gate E = Emitter C = Collector Tab = Collector PC TC = 25 C 660 W TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C Very High Current, Fast Switching IGBT TL Maximum Lead Temperature for Soldering 300 C Low VCE(sat) TSOLD 1.6 mm (0.062 in.) from Case for 10 260 C - for Minimum On-State Conduction... See More ⇒

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