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View ixsq20n60b2d1 detailed specification:

IXSH 20N60B2D1 VCES = 600 V High Speed IGBT IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C35 A G = Gate C = Collector IC110 TC = 110 C20 A E = Emitter TAB = Collector IF(110) 21 A ICM TC = 25 C, 1 ms 60 A SSOA VGE = 15 V, TJ = 125 C, RG = 82 ICM = 32 A (RBSOA) Clamped inductive load @ 0.8 VCES Features tSC VGE = 15 V, VCE = 360 V, TJ = 125 C 10 s International standard package (SCSOA) RG = 82 , non repetitive Guaranteed Short Circuit SOA PC TC = 25 C 190 W capability Low VCE(sat) TJ -55 ... +150 C - for low on-state conduction losses TJM 150 C High current handling capability MOS ... See More ⇒

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