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View ixtk170p10p ixtx170p10p detailed specification:

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -170 A PLUS247 (IXTX) ILRMS Lead Current Limit, RMS -160 A IDM TC = 25 C, Pulse Width Limited by TJM - 510 A IA TC = 25 C -170 A EAS TC = 25 C 3.5 J (TAB) dV/dt IS IDM, VDD VDSS, TJ 150 C 10 V/ns PD TC = 25 C 890 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TL 1.6mm (0.062 in.) from Case for 10s 300 C Features TSOLD Plastic Body for 10s 260 C International Standard Packages Md Mounting Force (PLUS247) 2... See More ⇒

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