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View ixxx110n60b4h1 detailed specification:

Advance Technical Information VCES = 600V XPTTM 600V IXXK110N60B4H1 IC100 = 110A GenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V PLUS247 (IXXX) VGEM Transient 30 V IC25 TC= 25 C ( Chip Capability ) 210 A ILRMS Terminal Current Limit 160 A IC100 TC = 100 C 110 A IF110 TC = 110 C 50 A G ICM TC = 25 C, 1ms 400 A G C Tab E SSOA VGE = 15V, TVJ = 150 C, RG = 2 ICM = 220 A (RBSOA) Clamped Inductive Load @VCE VCES G = Gate E = Emitter tsc VGE= 15V, VCE = 360V, TJ = 150 C 10 s C = Collector Tab = Collector (SCSOA) RG = 82 , Non Repetitive PC TC = 25 C 695 W TJ -55 ... +150 C Features ... See More ⇒

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