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View ixyp8n90c3d1 detailed specification:

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYA8N90C3D1 GenX3TM w/Diode IC110 = 8A IXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V TO-220AB (IXYP) VGEM Transient 30 V IC25 TC = 25 C 20 A IC110 TC = 110 C 8 A IF110 TC = 110 C 12 A G ICM TC = 25 C, 1ms 48 A C C (Tab) E IA TC = 25 C 4 A EAS TC = 25 C 15 mJ G = Gate C = Collector SSOA VGE = 15V, TVJ = 150 C, RG = 30 ICM = 16 A E = Emitter Tab = Collector (RBSOA) Clamped Inductive Load @VCE VCES PC TC = 25 C 125 W Features TJ -55 ... +175 C TJM 175 C Optimized for Low Switching Losses Tstg -55 ... +175 C Square RBSOA TL Maxim... See More ⇒

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