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View ixz318n50 detailed specification:

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25 C to 150 C VDSS 500 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 19 A Tc = 25 C, pulse width limited by TJM IDM 95 A Tc = 25 C IAR 19 A Tc = 25 C EAR TBD mJ IS IDM, di/dt 100A/ s, VDD VDSS, 5 V/ns Tj 150 C, RG = 0.2 dv/dt IS = 0 >200 V/ns PDC 880 W DRAIN Tc = 25 C PDHS 440 W GATE Tamb = 25 C PDAMB 3.0 W RthJC 0.17 C/W SG1 SG2 SD1 SD2 RthJHS 0.34 C/W Features Symbol Test Conditions Characteristic Values Isol... See More ⇒

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