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View 2n7002x detailed specification:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 3 3 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKING K72 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 60 V ID Drain Current 115 mA PD Power Dissipation 500 mW TJ Junction Temperature 150 TSTG Storage Temperature -55 +150 R JA Thermal Resistance from Junction to Ambient /W 250 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250 A 60 V Gate-threshold voltage* V(GS)th... See More ⇒

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