All Transistors. Equivalents Search

View 2sa1012 detailed specification:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 1.25 W Thermal Resistance Junction /W 100 Ambient to Tj Junction Temperature 150 Tstg Storage Temperature Range -55 +150 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =-0.1mA, IE=0 -60 V Col... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sa1012.pdf Design, MOSFET, Power

 2sa1012.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1012.pdf Database, Innovation, IC, Electricity