All Transistors. Equivalents Search

View 2sa1109 detailed specification:

JMnic Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -14 A PC Collector power dissipation TC=25 200 W Tj Junction temperature 150 Tstg Storage temperature -65 150 JMnic Product Specification Silicon PNP Power Transistors 2SA1109 CHARACTERISTICS Tj=25 unless otherw... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sa1109.pdf Design, MOSFET, Power

 2sa1109.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1109.pdf Database, Innovation, IC, Electricity