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S9018 Silicon Epitaxial Planar Transistor FEATURES High current gain bandwidth product. power dissipation.(PC=200mW) SOT-23 APPLICATIONS NPN epitaxial silicon transistor. ORDERING INFORMATION Type No. Marking Package Code S9018 J8 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current -Continuous IC 50 mA Collector Dissipation PC 200 mW Junction and Storage Temperature Tj,Tstg -55 150 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=-100 A,IC=... See More ⇒

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