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View 2n3904a detailed specification:

SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. F 1.27 G 0.85 Low Collector Output Capacitance H 0.45 _ Cob=4pF(Max.) @VCB=5V. H J 14.00 + 0.50 K 0.55 MAX F F Complementary to 2N3906A. L 2.30 M 0.45 MAX N 1.00 1 2 3 1. EMITTER 2. BASE MAXIMUM RATING (Ta=25 ) 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V TO-92 VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 1... See More ⇒

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