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View bc337 detailed specification:

SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current IC=800mA. DC Current Gain hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO Collector-Base Voltage 50 V M 0.45 MAX N 1.00 VCEO 1 2 3 Collector-Emitter Voltage 45 V VEBO 1. COLLECTOR Emitter-Base Voltage 5 V 2. BASE IC Collector Current 800 mA 3. EMITTER IE Emitter Current -800 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX... See More ⇒

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