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View ktb985 detailed specification:

SEMICONDUCTOR KTB985 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT B D FEATURES Adoption of MBIT processes. DIM MILLIMETERS P Low collector-to-emitter saturation voltage. DEPTH 0.2 A 7.20 MAX Fast switching speed. B 5.20 MAX C C 0.60 MAX S Large current capacity and wide ASO. D 2.50 MAX Q E 1.15 MAX K Complementary to KTD1347. F 1.27 G 1.70 MAX H 0.55 MAX FF _ J 14.00 + 0.50 K 0.35 MIN HH H _ L 0.75 + 0.10 E M 4 M MAXIMUM RATING (Ta=25 ) N 25 O 1.25 CHARACTERISTIC SYMBOL RATING UNIT L 1 2 3 H P 1.50 Q 0.10 MAX N N VCBO -60 V Collector-Base Voltage _ R 12.50 + 0.50 1. EMITTER S 1.00 VCEO -50 V Vollector-Emitter Voltage 2. COLLECTOR 3. BASE VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A TO-92L ICP Collector Current (Pulse) -6 A PC Collecto... See More ⇒

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