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View ktc1006 detailed specification:

SEMICONDUCTOR KTC1006 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR CB TRANSCEIVER TX DRIVER APPLICATION. B D FEATURES Recommended for Driver Stage Application of AM 4W Transmitter. DIM MILLIMETERS P High Power Gain. DEPTH 0.2 A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF MAXIMUM RATINGS (Ta=25 ) _ J 14.00 + 0.50 K 0.35 MIN HH H CHARACTERISTIC SYMBOL RATING UNIT _ L 0.75 + 0.10 E M 4 M VCBO Collector-Base Voltage 80 V N 25 O 1.25 L 1 2 3 VCER H Collector-Emitter Voltage 80 V P 1.50 Q 0.10 MAX N N _ VEBO Emitter-Base Voltage 5 V R 12.50 + 0.50 1. EMITTER S 1.00 IC 2. COLLECTOR Collector Current 800 mA 3. BASE IE Emitter Current -800 mA PC Colletor Power Dissipation 1 W TO-92L Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Ran... See More ⇒

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