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View mje13005dc detailed specification:

SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC DC 5 Collector Current A ICP Pulse 10 IB Base Current 2 A PC 75 W Collector Power Dissipation (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 10 A hFE(1) VCE=5V, IC=1A 23 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 8 - - IC=1A, IB=... See More ⇒

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