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View mje13005df detailed specification:

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATING (Ta=25 ) _ E 3.2 0.2 + _ F 3.0 0.3 + CHARACTERISTIC SYMBOL RATING UNIT _ 12.0 0.3 G + H 0.5+0.1/-0.05 VCBO Collector-Base Voltage 800 V _ + J 13.6 0.5 L L R K _ 3.7 0.2 + VCEO Collector-Emitter Voltage 400 V L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 VEBO M Emitter-Base Voltage 10 V D D _ N 2.54 0.1 + _ IC + DC 5 P 6.8 0.1 _ + Collector Current A Q 4.5 0.2 ICP _ Pulse 10 R 2.6 0.2 + N N H S 0.5 Typ IB Base Current 2 A PC 30 W Collector Power Dissipa... See More ⇒

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