View mje13009 detailed specification:

mje13009mje13009

SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 100 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A,... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 mje13009.pdf Design, MOSFET, Power

 mje13009.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13009.pdf Database, Innovation, IC, Electricity