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View mps8550 detailed specification:

SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -6 V L 2.30 M 0.45 MAX IC Collector Current -1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 *Cu Lead-Frame 625mW Fe Lead-Frame 400mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IE... See More ⇒

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