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View 2sd882a detailed specification:

SMD Type Transistors NPN Tr ansistors 2SD882A 1.70 0.1 Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 70 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 6 V Collector Current to Continuous IC 3 A Collector Dissipation Pc 0.5 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA ,IE=0 70 V Collector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 60 V Emitter-base breakdown voltage VEBO IE= 100 uA ,IC=0 6 V Collector cut-off current ICBO VCB=70 V , IE=0 1 uA Collector cut-off current ICEO VCE=60 V , IB=0 10 uA Emitter cut... See More ⇒

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