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View irf630s detailed specification:

SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistance d g s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Continuous Drain Current ID Ta = 100 6.3 A Pulsed Drain Current IDM 36 Peak Non-Repetitive Avalanche Current IAS 9 Power Dissipation PD 88 W Non-Repetitive Avalanche Energy EAS 250 mJ Thermal Resistance.Junction- to-Ambient RthJA 50 /W Thermal Resistance Junction to Mounting Base RthJB 1.7 Junction Temperature TJ 175 Storage Temperature Range Tstg -55 to 175 1 www.kexin.com.cn SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) Electrical Characteristics Ta =... See More ⇒

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