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View bc237 bc238 bc239 detailed specification:

bc237_bc238_bc239bc237_bc238_bc239

BC237/238/239(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) Collector-Emitter Voltage BC237 45 VCEO V BC238/239 25 Emitter-Base Voltage BC237 6 VEBO V BC238/239 5 IC Collector Current -Continuous 0.1 A Collector Power Dissipation 350 PC mW Thermal Resistance, R JA 357 /W Junction to Ambient Thermal Resistance, Junction to Case R JC 125 /W Junction Temperature 150 Tj Storage Temperature -55-150 Tstg BC237/238/239(NPN) TO-92 Bipolar Transistors ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT IC=100 A, IE=0 BC237 50 Collector-base breakdown voltage V(BR)... See More ⇒

 

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