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View d882 to-252-2l detailed specification:

D882 Transistor(NPN) 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V, IE=0 1 A Collector cut-off current ICEO VCE= 30 V, ... See More ⇒

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