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LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current 160 PD @TC = 25 C Power Dissipation 94 W Linear Derating Factor 0.63 W/ C VGS Gate-to-Source Voltage 20 V IAR Avalanche Current 25 A EAR Repetitive Avalanche Energy 9.4 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m) Thermal... See More ⇒

 

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