All Transistors. Equivalents Search

View mmg400d060b6n detailed specification:

MMG400D060B6N 600V 400A IGBT Module July 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GD Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25 C unless otherwise specified Symbol Parameter Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 600 V VGES Gate - Emitter Voltage 20 V TC=25 C 460 A IC DC Collector Current TC=50 C 400 A TC=25 C, tp=1ms 920 A ICpuls Pulsed Collector Current TC=50 C, tp=1ms 800 A Ptot Power Dissipation Per IGBT 1400 W TJ Junction Temperature Range -40 to +150 C TSTG Storage Temperature Range -40 to +125 C Visol Insulation Test Voltage AC, t=1min 3000 V Free-Wheeling Diode VRRM... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 mmg400d060b6n.pdf Design, MOSFET, Power

 mmg400d060b6n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmg400d060b6n.pdf Database, Innovation, IC, Electricity