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View mdf18n50 detailed specification:

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GS MDF18N50 is suitable device for SMPS, high speed switching Applications and general purpose applications. Power Supply PFC High Current, High Speed Switching D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V TC=25oC 18 A Continuous Drain Current ( ) ID TC=100oC 11 A Pulsed Drain Current(1) IDM 72 A TC=25oC 37 W Power Dissipation PD W/ oC Derate above 25 oC 0.29 Peak Diode Recovery dv/dt(3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy(... See More ⇒

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