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MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general purpose applications. Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol MDP18N50B MDF18N50B Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V TC=25oC 18 18* A Continuous Drain Current ID TC=100oC 11 11* A Pulsed Drain Current(1) IDM 72 72* A TC=25oC 236 37 W Power Dissipation PD Derate above 25 oC 1.89 0.29 W/ oC Repetitive Avalanche Energy(1) EAR 23.6 mJ Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns ... See More ⇒

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