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MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27 General Description Features . V = 500V DS These N-channel MOSFET are produced using advanced I = 20.0A @ V = 10V D GS MagnaChip s MOSFET Technology, which provides low on- R 0.27 @ V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are suitable device for SMPS, high Speed Power Supply switching and general purpose applications. HID Lighting D G S G D S G G TO-247 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage V 500 V DSS Gate-Source Voltage V 30 V GSS T =25oC 20 A C Continuous Drain Current ID T =100oC 12.5 A C Pulsed Drain Current(1) I 80 A DM T =25oC 245 W C Power Dissipation P D Derate above 25 oC 1.96 W/ oC ... See More ⇒

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