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View 24n50a detailed specification:

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode 24 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 230 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Reverse polarity available upon request ENHANCEMENT MODE POWER MOSFET Maximum Ratings @ 25 C (unless otherwise specified) DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS 500 Volts @ T 25 C J Drain-to-Gate Breakdown Voltage @ T 25 C, R = 1 M BVDGR 500 Volts J GS Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25 C ID25 24 Amps Tj= I... See More ⇒

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