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View 2n3636ub detailed specification:

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si) 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANSL 50K Rads (Si) JANSR 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N3634* 2N3636* Parameters / Test Conditions Symbol Unit 2N3635* 2N3637* Collector-Emitter Voltage VCEO 140 175 Vdc Collector-Base Voltage VCBO 140 175 Vdc Emitter-Base Voltage VEBO 5.0 5.0 Vdc TO-5* Collector Current IC 1.0 1.0 Adc 2N3634L, 2N3635L Total Power Dissipation @ TA = +25 C 1.0 W 2N3636L, 2N3637L @ TC = +25 C PT **... See More ⇒

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