View 2n5666s detailed specification:
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5665 Parameters / Test Conditions Symbol Unit 2N5666, S 2N5667, S Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 250 400 Vdc TO-66 (TO-213AA) Emitter-Base Voltage VEBO 6.0 Vdc 2N5664, 2N5665 Base Current IB 1.0 Adc Collector Current IC 5.0 Adc 2N5664 2N5666, S 2N5666U3 2N5665 2N5667, S Total 1/ @ TA = +25 C 2.5 1.2 1.5 PT W Power Dissipation @ TC = +100 C 30 15 35 Operating & Storage Junction TJ, Tstg -65 to +200 C TO-5 Temperature Range ... See More ⇒
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2n5666s.pdf Design, MOSFET, Power
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