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View apt47n65bc3g detailed specification:

APT47N65BC3 600V 47A 0.070 Super Junction MOSFET COOLMOS Power Semiconductors D3 Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N65BC3 UNIT VDSS Drain-Source Voltage 650 Volts ID Continuous Drain Current @ TC = 25 C 47 Amps IDM Pulsed Drain Current 1 141 VGS Gate-Source Voltage Continuous 20 Volts VGSM Gate-Source Voltage Transient 30 Total Power Dissipation @ TC = 25 C Watts 417 PD Linear Derating Factor W/ C 3.33 TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" from Case for 10 Sec. 260 dv /dt Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125 C) V/n... See More ⇒

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