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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line RF Power MRF182 Field Effect Transistors MRF182S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 30 W, 1.0 GHz Broadband Performance from HF to 1 GHz LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND Mode Inductances RF POWER MOSFETs D CASE 360B 01, STYLE 1 G (MRF182) S CASE 360C 03, STYLE 1 (MRF182S) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 70 C PD 74 W Derate above 70 C 0.57 W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 1.75 C/W... See More ⇒

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