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View ss8550-ms detailed specification:

www.msksemi.com SS8550-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary to SS8050-MS 1. BASE 2. EMITTER SOT 23 MARKING Y2 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V I Collector Current -1.5 A C P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA Operation Junction and TJ,Tstg -55 +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100 A, IE=0 -40 V Collector-emitter breakdown voltage V I =-0.1mA, I =0 -25 V (BR)CEO C B ... See More ⇒

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