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View 2sa1010 detailed specification:

DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high- frequency power amplifiers. FEATURES Low collector saturation voltage Fast switching speed Complementary transistor 2SC2334 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -100 V Pin Connection Emitter to base voltage VEBO -7.0 V Collector current (DC) IC(DC) -7.0 A Collector current (pulse) IC(pulse)* -15 A Base current (DC) IB(DC) -3.5 A Total power dissipation PT (Tc = 25 C) 40 W Total power dissipation PT (Ta = 25 ... See More ⇒

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