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DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.1 0 0.05 FEATURES High DC current gain hFE2 = 200 TYP. 3 0 to 0.1 High voltage VCEO = -50 V Can be automatically mounted 2 1 0.2+0.1 0 ORDERING INFORMATION 0.6 0.5 0.5 0.75 0.05 1.0 PART NUMBER PACKAGE 1.6 0.1 1 Emitter 2SA1836 SC-75 (USM) 2 Base 3 Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5.0 V Collector Current (DC) IC(DC) -100 mA IC(pulse) -200 mA Collector Current (pulse) Note1 PT 200 mW Total Power Dissipation Note2 Junction Temperature Tj 150 C Storage Temperature Range Tstg 55 to + 150 C ... See More ⇒

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