View 2sc3357 detailed specification:
DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit mm) low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5 0.1 1.5 0.1 1.6 0.2 FEATURES Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz C EB NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, 0.42 0.42 0.06 0.06 IC = 40 mA, f = 1.0 GHz 1.5 0.47 0.06 -0.03 3.0 Large PT in Small Package 0.41+0.05 PT 2 W with 16 cm2 0.7 mm Ceramic Substrate. Term, Connection E Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) C Collector (Fin) B Base Collector to Base Voltage VCBO 20 V (SOT-89) Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage V... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2sc3357.pdf Design, MOSFET, Power
2sc3357.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc3357.pdf Database, Innovation, IC, Electricity
