View irf640h detailed specification:

irf640hirf640h

RoHS IRF640 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. D D They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications G such as switching regulators, convertors, motor drivers D G S and drivers for high power bipolar switching transistors DS requiring high speed and low gate drive power. These transistors can be operated directly from TO-220AB integrated circuits. TO-263(D2PAK) (IRF640A) (IRF640H) FEATURES RDS(ON) = 0.180 @ VGS = 10V Ultra low gate charge(63nC max.) Low reverse transfer capacitance (CRSS = 91pF typical) D (Drain) ... See More ⇒

 

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