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BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 C [1] - - 200 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 100 mA; pulsed; - 2.7 4.5 resistance tp ... See More ⇒

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