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OM6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Levels Ceramic Feedthroughs Available DESCRIPTION This IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3 motors, UPS and high power SMPS. MAXIMUM RATINGS @ 25 C Unless Specified Otherwise q PART IC (Cont.) V(BR)CES VCE (sat) (Typ.) Tf (Typ.) qJC PD TJ NUMBER @ 90 C, A V V ns C/W W C 3.1 OM6517SA 20 1000 4.0 ... See More ⇒

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