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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B POWER TRANSISTORS = 100 Vdc (min) - BDX33C, BDX334C 80-100 VOLTS, 65 WATTS Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic Construction with Build-In Base-Emitter Shunt Resistors Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit TO-220AB CASE 221A-09 Collector-Emitter Voltage VCEO Vdc BDX33B, BDX34B 80 1 STYLE 1 2 BDX33C, BDX34C 100 3 Collector-Base Voltage VCB... See More ⇒

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