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IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.31 V (Typ.) High Current Capability C Low Saturation Voltage VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A Fast Switching Tighten Parameter Distribution These Devices are Pb-Free and are RoHS Compliant G Applications E Solar Inverter MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 950 V Gate to Emitter Voltage VGES 20 V 30 G Transient Gate to Emitter Voltage TO-247-3LD C CASE 340CD E 150 IC A Collector Current @TC = 25 C 75 @TC = 100 C MARKING DIAGRAM ILM 225 A Pulsed Collector Current... See More ⇒

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