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NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features http //onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested 600 V 4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) D (2) Rating Symbol NDF NDP NDD Unit Drain-to-Source Voltage VDSS 600 V Continuous Drain Current ID 2.4 2.2 A RqJC (Note 1) G (1) Continuous Drain Current ID 1.6 1.4 A RqJC TA = 100 C (Note 1) Pulsed Drain Current, VGS IDM 10 9 A S (3) @ 10 V Power Dissipation RqJC PD 24 72 57 W Gate-to-Source Voltage VGS 30 V Single Pulse Avalanche EAS 120 mJ Energy, ID = 2.4 A ESD (HBM) Vesd 2500 V (JESD 22-A114) RMS Isolation Voltage VISO 4500 V (t = 0.3 sec., R.H. 30%, TA = 25 C) (Figure... See More ⇒

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