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NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 650 V 0.75 W Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol NDF Unit D (2) Drain-to-Source Voltage VDSS 600 V Continuous Drain Current, RqJC (Note 1) ID 10 A Continuous Drain Current ID 6.0 A TA = 100 C, RqJC (Note 1) G (1) Pulsed Drain Current, IDM 40 A tP = 10 ms Power Dissipation, RqJC PD 39 W S (3) Gate-to-Source Voltage VGS 30 V Single Pulse Avalanche Energy EAS 300 mJ (L = 6.0 mH, ID = 10 A) ESD (HBM) (JESD22-A114) Vesd 3900 V RMS Isolation Voltage VISO 4500 V (t = 0.3 sec., R.H. 30%, TA = 25 C) (Figure 13) ... See More ⇒

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