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NTMFS6H800N MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 2.1 mW @ 10 V 203 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D (5) Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGS 20 V Continuous Drain TC = 25 C ID 203 A Current RqJC G (4) TC = 100 C 143 (Notes 1, 3) Steady State Power Dissipation TC = 25 C PD 200 W RqJC (Note 1) S (1,2,3) TC = 100 C 100 N-CHANNEL MOSFET Continuous Drain TA = 25 C ID 28 A Current RqJA TA = 100 C 20 (Notes 1, 2, 3) Steady MARKING State Power Dissipation TA = 25 C PD 3.8 W DIAGRAM RqJA (Notes 1 & 2)... See More ⇒

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