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NTMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit 1.9 mW @ 10 V 80 V 224 A Drain-to-Source Voltage VDSS 80 V 2.4 mW @ 4.5 V Gate-to-Source Voltage VGS 20 V Continuous Drain TC = 25 C ID 224 A Current RqJC D (5,6) TC = 100 C 158 (Notes 1, 3) Steady State Power Dissipation TC = 25 C PD 214 W RqJC (Note 1) TC = 100 C 107 G (4) Continuous Drain TA = 25 C ID 30 A Current RqJA TA = 100 C 21 (Notes 1, 2, 3) Steady S (1,2,3) State Power Dissipation TA = 25 C PD 3.9 W RqJA (Notes 1, 2) N-CHANNEL MOSFET TA = ... See More ⇒

 

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 ntmfs6h800nl.pdf Design, MOSFET, Power

 ntmfs6h800nl.pdf RoHS Compliant, Service, Triacs, Semiconductor

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