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MOSFET - Power, Single N-Channel 80 V, 2.7 mW, 160 A NTMFS6H801NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 160 A 3.3 mW @ 4.5 V Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGS 20 V D (5,6) Continuous Drain TC = 25 C ID 160 A Current RqJC TC = 100 C 113 (Notes 1, 3) Steady State Power Dissipation TC = 25 C PD 167 W G (4) RqJC (Note 1) TC = 100 C 83 Continuous Drain TA = 25 C ID 24 A S (1,2,3) Current RqJA TA = 100 C 17 (Notes 1, 2, 3) Steady N-CHANNEL MOSFET State Power Dissipation TA = 25 C PD 3.8 W RqJA (Notes 1, 2) TA... See More ⇒

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