View 2sb1612 detailed specification:
Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V marking Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2.4 A 1 Base 2 Collector EIAJ SC 62 Collector current IC 2 A 3 Emitter Mini Power Type Package Collector power dissipation PC* 1 W Junction temperature Tj 150 C Marking symbol 2F Storage temperature Tstg 55 +150 ... See More ⇒
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